Odyssey Semiconductor Technologies, Inc.

Vertical GaN for Power Applications

Now accepting product sample requests
Vertical GaN power FETs offer unparalleled performance at high-voltages. These product samples highlight the primary benefits of vertical GaN – low Rds-on and low input capacitance with blocking voltages of 1200 V so conduction and switching losses are minimized for highest power density and conversion efficiency.
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Products designed and manufactured for the most challenging environments

Odyssey Semiconductor’s vertical GaN Power FETs are designed and manufactured to work in applications where reliability and robustness must be met with the power efficiency and overall performance.
Industrial Motor
Electric Vehicle
Renewable Energy

Vertical GaN Transistors

Part Number

Blocking Voltage

Current Rating

Package

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OD1210D

1200 V

10A

8mm x 8mm DFN

Part Number

Blocking Voltage

Current Rating

Package

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OD6510D

650 V

10A

8mm x 8mm DFN

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