Odyssey Semiconductor Technologies, Inc.
Vertical GaN for Power Applications
Now accepting product sample requests
Vertical GaN power FETs offer unparalleled performance at high-voltages. These product samples highlight the primary benefits of vertical GaN – low Rds-on and low input capacitance with blocking voltages of 1200 V so conduction and switching losses are minimized for highest power density and conversion efficiency.
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Products designed and manufactured for the most challenging environments
Odyssey Semiconductor’s vertical GaN Power FETs are designed and manufactured to work in applications where reliability and robustness must be met with the power efficiency and overall performance.
